Theoretical studies of optical modulation in lattice matched and strained quantum wells due to transverse electric fields
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[1] L. Esaki,et al. Semiconductor superfine structures by computer-controlled molecular beam epitaxy , 1976 .
[2] Cyclotron resonance in the two-dimensional hole gas in (Ga,Al)As/GaAs heterostructures. , 1985, Physical review. B, Condensed matter.
[3] Jasprit Singh,et al. Quantum mechanical theory of linewidths of localized radiative transitions in semiconductor alloys , 1986 .
[4] W. Kohn,et al. Motion of Electrons and Holes in Perturbed Periodic Fields , 1955 .
[5] L. J. Sham,et al. Effective masses of holes at GaAs-AlGaAs heterojunctions. , 1985, Physical Review B (Condensed Matter).
[6] D. A. Kleinman,et al. Luminescence studies of optically pumped quantum wells in GaAs- Al x Ga 1 − x As multilayer structures , 1980 .
[7] Jasprit Singh,et al. Inclusion of spin-orbit coupling into tight binding bandstructure calculations for bulk and superlattice semiconductors , 1987 .
[8] A. Gossard,et al. Valence band mixing in GaAs-(AlGa)As heterostructures , 1985 .
[9] Chang,et al. Effect of band hybridization on exciton states in GaAs-AlxGa1-xAs quantum wells. , 1985, Physical review. B, Condensed matter.
[10] A. Y. Cho,et al. Growth of III–V semiconductors by molecular beam epitaxy and their properties , 1983 .
[11] Songcheol Hong,et al. Study of the low‐temperature line broadening mechanisms for excitonic transitions in GaAs/AlGaAs modulator structures , 1986 .
[12] L. Esaki,et al. Variational calculations on a quantum well in an electric field , 1983 .
[13] A. Cho. Growth and Properties of III-V Semiconductors by Molecular Beam Epitaxy , 1985 .
[14] Leroy L. Chang,et al. Exciton binding energy in quantum wells , 1982 .
[15] Wood,et al. Electric field dependence of optical absorption near the band gap of quantum-well structures. , 1985, Physical review. B, Condensed matter.
[16] Y. Yoshikuni,et al. Anisotropic electroabsorption and optical modulation in InGaAs/InAlAs multiple quantum well structures , 1986 .
[17] G. Bastard. Coulombic bound states in semiconductor quantum wells , 1985 .
[18] Chang Yc,et al. Optical properties in modulation-doped GaAs-Ga1-xAlxAs quantum wells. , 1985 .
[19] G. Osbourn. Electronic properties of strained‐layer superlattices , 1983 .
[20] Theory of electric field-induced optical modulation in single and multiquantum well structures using a Monte Carlo approach , 1986 .
[21] Leroy L. Chang,et al. Effect of an electric field on the luminescence of GaAs quantum wells , 1982 .
[22] P. Bhattacharya,et al. Field‐dependent linewidths and photoluminescence energies in GaAs‐AlGaAs multiquantum well modulators , 1986 .
[23] Songcheol Hong,et al. Excitonic energies and inhomogeneous line broadening effects in InAlAs/InGaAs modulator structures , 1987 .
[24] Self-consistent calculations of electric subbands in p-type GaAlAs-GaAs heterojunctions , 1985 .
[25] W. Wiegmann,et al. High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure , 1983, 1983 International Electron Devices Meeting.
[26] Harry H. Wieder,et al. Electroabsorption in an InGaAs/GaAs strained‐layer multiple quantum well structure , 1986 .
[27] Sanders Gd,et al. Electronic properties and optical-absorption spectra of GaAs-AlxGa1-xAs quantum wells in externally applied electric fields. , 1987 .
[28] P. Lawaetz,et al. Valence-Band Parameters in Cubic Semiconductors , 1971 .
[29] E. Austin,et al. Electronic structure of an isolated GaAs-GaAlAs quantum well in a strong electric field. , 1985, Physical review. B, Condensed matter.
[30] Lee,et al. Luminescence linewidths of excitons in GaAs quantum wells below 150 K. , 1986, Physical review. B, Condensed matter.
[31] Yia-Chung Chang,et al. New method for calculating electronic properties of superlattices using complex band structures , 1981 .
[32] J. C. Slater,et al. Simplified LCAO Method for the Periodic Potential Problem , 1954 .
[33] P. Bhattacharya,et al. Enhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structures , 1987 .
[34] David A. B. Miller,et al. 100 ps waveguide multiple quantum well (MQW) optical modulator with 10:1 on/off ratio , 1985 .
[35] Leroy L. Chang,et al. Light and Heavy Valence Subband Reversal in GaSb/AlSb Superlattices, , 1984 .
[36] D. Chadi. Spin-orbit splitting in crystalline and compositionally disordered semiconductors , 1977 .
[37] J. Merz,et al. GaSb/AlSb multiquantum well structures: molecular beam epitaxial growth and narrow-well photoluminescence , 1983 .
[38] M. Altarelli,et al. Calculation of hole subbands at the GaAs- Al x Ga 1 − x As interface , 1984 .
[39] Ronald L. Greene,et al. Energy levels of hydrogenic impurities and Wannier excitons in quantum well structures , 1983 .
[40] Matsuura,et al. Subbands and excitons in a quantum well in an electric field. , 1986, Physical review. B, Condensed matter.
[41] J. M. Luttinger. Quantum Theory of Cyclotron Resonance in Semiconductors: General Theory , 1956 .
[42] D. Miller,et al. Room‐temperature excitons in 1.6‐μm band‐gap GaInAs/AlInAs quantum wells , 1985 .
[43] S. Chika,et al. Photoluminescence study of InxAl1−xAs‐GaAs strained‐layer superlattices , 1986 .