Advanced Modeling of MISHFET Devices and their Performance in Current-Mode Class-D Power Amplifiers

GaN HFETs and MISHFETs are promising power devices for RF and microwave power applications. However, the performance of devices can be compromised under some operating conditions. From the device development point of view, device optimization is necessary to obtain the best possible performance. For device modeling and design purposes, the device needs to be characterized and modeled accurately in order to foresee how the device will behave under realistic operating conditions. In this paper, an improved EEHEMT1-based model for GaN MISHFETs, will be introduced. This model is capable of describing the knee region of the device's output characteristics, dispersion effects as well as gate diode behavior accurately. The models will be incorporated in a switched-mode amplifier topology and evaluations will be made to determine the suitability of MISHFETs in these amplifiers.

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