论文信息 - Fast transient infrared thermal analysis of smart Power MOSFETS in permanent short circuit operation

Fast transient infrared thermal analysis of smart Power MOSFETS in permanent short circuit operation

Automotive smart power MOSFETs are submitted to very high power dissipation when they operate in short circuit conditions. The consequential fast temperature cycling stresses the device structure and challenges its reliability. A not conventional 2D thermal measurement method permitted the thermal analysis of extremely fast thermal transients. This made feasible the definition of new smart power design rules to reduce stressing temperature peaks so improving significantly their reliability

A. Irace | G. Breglio | P. Spirito | S. Russo | R. Letor

[1] Giovanni Breglio,et al. Thermal mapping and 3D numerical simulation of new cellular power MOS affected by electro-thermal instability , 2000 .

[2] Andrea Irace,et al. Experimental characterization of temperature distribution on Power MOS devices during Unclamped Inductive Switching , 2004, Microelectron. Reliab..

[3] Sebastiano Russo,et al. Fast thermal fatigue on top metal layer of power devices , 2002, Microelectron. Reliab..

[4] Mehrdad Ehsani,et al. Current status and future trends in More Electric Car power systems , 1999, 1999 IEEE 49th Vehicular Technology Conference (Cat. No.99CH36363).

[5] Giovanni Breglio,et al. Experimental detection of time dependent temperature maps in power bipolar transistors , 2000 .