Device Model for Ballistic CNFETs Using the First Conducting Band

This efficient approximation model for the drain-source current in a CNFET is analytic, its execution is fast, and it is suitable for simulating circuits consisting of many CNFET devices in a CAD environment. Evaluation results show that the model encounters a very modest normalized RMS error for diameter, Fermi level, and bias variations, while significantly improving simulation performance.

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