Dose rate and SDD dependence of commercially available diode detectors.

The dose-rate dependence of commercially available diode detectors was measured under both high instantaneous dose-rate (pulsed) and low dose rate (continuous, Co-60) radiation. The dose-rate dependence was measured in an acrylic miniphantom at a 5-cm depth in a 10 x 10 cm2 collimator setting, by varying source-to-detector distance (SDD) between at least 80 and 200 cm. The ratio of a normalized diode reading to a normalized ion chamber reading (both at SDD=100 cm) was used to determine diode sensitivity ratio for pulsed and continuous radiation at different SDD. The inverse of the diode sensitivity ratio is defined as the SDD correction factor (SDD CF). The diode sensitivity ratio increased with increasing instantaneous dose rate (or decreasing SDD). The ratio of diode sensitivity, normalized to 4000 cGy/s, varied between 0.988 (1490 cGy/s)-1.023 (38,900 cGy/s) for unirradiated n-type Isorad Gold, 0.981 (1460 cGy/s)-1.026 (39,060 cGy/s) for unirradiated QED Red (n type), 0.972 (1490 cGy/s)-1.068 (38,900 cGy/s) for preirradiated Isorad Red (n type), 0.985 (1490 cGy/s)-1.012 (38,990 cGy/s) for n-type Pt-doped Isorad-3 Gold, 0.995 (1450 cGy/s)-1.020 (21,870 cGy/s) for n-type Veridose Green, 0.978 (1450 cGy/s)-1.066 (21,870 cGy/s) for preirradiated Isorad-p Red, 0.994 (1540 cGy/s)-1.028 (17,870 cGy/s) for p-type preirradiated QED, 0.998 (1450 cGy/s)-1.003 (21,870 cGy/s) for the p-type preirradiated Scanditronix EDP20(3G), and 0.998 (1490 cGy/s)-1.015 (38,880 cGy/s) for Scanditronix EDP10(3G) diodes. The p-type diodes do not always show less dose-rate dependence than the n-type diodes. Preirradiation does not always reduce diode dose-rate dependence. A comparison between the SDD dependence measured at the surface of a full scatter phantom and that in a miniphantom was made. Using a direct adjustment of radiation pulse height, we concluded that the SDD dependence of diode sensitivity can be explained by the instantaneous dose-rate dependence if sufficient buildup is provided to eliminate electron contamination. An energy independent empirical formula was proposed to fit the dose-rate dependence of diode sensitivity.

[1]  T. Zhu,et al.  Temperature dependence of commercially available diode detectors. , 2002, Medical physics.

[2]  Linearity with dose rate of low resistivity p-type silicon semiconductor detectors , 1993 .

[3]  T C Zhu,et al.  Modeling the output ratio in air for megavoltage photon beams. , 2001, Medical physics.

[4]  G. Rikner,et al.  General specifications for silicon semiconductors for use in radiation dosimetry. , 1987, Physics in medicine and biology.

[5]  Timothy C Zhu,et al.  Modeling the instantaneous dose rate dependence of radiation diode detectors. , 2003, Medical physics.

[6]  X. Zhu Entrance dose measurements for in‐vivo diode dosimetry: Comparison of correction factors for two types of commercial silicon diode detectors , 2000, Journal of applied clinical medical physics.

[7]  G. Rikner,et al.  Radiation damage induced dose rate non-linearity in an n-type silicon detector. , 1984, Acta radiologica. Oncology.

[8]  Influence of electron contamination on in vivo surface dosimetry for high-energy photon beams. , 1998, Medical physics.

[9]  G. Rikner,et al.  Effects of radiation damage on p-type silicon detectors , 1983 .

[10]  C. Sibata,et al.  In vivo dosimetry using a single diode for megavoltage photon beam radiotherapy: Implementation and response characterization , 2001, Journal of applied clinical medical physics.

[11]  Evaluation of temperature effects in p-type silicon detectors , 1986 .

[12]  The effect of dose rate dependence of p-type silicon detectors on linac relative dosimetry. , 1997, Medical physics.

[13]  P. Jursinic Implementation of an in vivo diode dosimetry program and changes in diode characteristics over a 4-year clinical history. , 2001, Medical physics.

[14]  Correlation between temperature and dose rate dependence of semiconductor response; influence of accumulated dose. , 1990, Radiotherapy and oncology : journal of the European Society for Therapeutic Radiology and Oncology.

[15]  D Huyskens,et al.  Build-up modification of commercial diodes for entrance dose measurements in 'higher energy' photon beams. , 1999, Radiotherapy and oncology : journal of the European Society for Therapeutic Radiology and Oncology.