High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges

This paper presents the status of high-speed SiGe BiCMOS technologies at STMicroelectronics. Process and electrical characteristics of two 120-nm platforms, qualified or under development, are presented together with results demonstrated on optical and millimeter-wave circuits. Advanced developments addressing end-of-roadmap BiCMOS are also presented and discussed

[1]  R. Krithivasan,et al.  Half-terahertz operation of SiGe HBTs , 2006, IEEE Electron Device Letters.

[2]  D. Celi,et al.  230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications , 2005, IEEE Journal of Solid-State Circuits.

[3]  S.P. Voinigescu,et al.  Low-Power, Low-Phase Noise SiGe HBT Static Frequency Divider Topologies up to 100 GHz , 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

[4]  B. Karajica,et al.  An 80-Gb/s 2/sup 31/-1 pseudorandom binary sequence generator in SiGe BiCMOS technology , 2005, IEEE Journal of Solid-State Circuits.

[5]  P. Chevalier,et al.  Design and Scaling of SiGe BiCMOS VCOs Above 100GHz , 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

[6]  F. Leverd,et al.  A 150GHz f/sub T//f/sub max/ 0.13/spl mu/m SiGe:C BiCMOS technology , 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).

[7]  P. Chevalier,et al.  Advanced SiGe BiCMOS and CMOS platforms for Optical and Millimeter-Wave Integrated Circuits , 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

[8]  P. Chevalier,et al.  Carbon effect on neutral base recombination in high-speed SiGeC HBTs , 2006, 2006 International SiGe Technology and Device Meeting.

[9]  S.P. Voinigescu,et al.  The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks , 2006, IEEE Journal of Solid-State Circuits.

[10]  P. Chevalier,et al.  300 GHz f/sub max/ self-aligned SiGeC HBT optimized towards CMOS compatiblity , 2005, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..

[11]  P. Chevalier,et al.  Band-to-band tunneling in vertically scaled SiGe:C HBTs , 2006, IEEE Electron Device Letters.

[12]  P. Chevalier,et al.  Low-cost self-aligned SiGeC HBT module for high-performance bulk and SOI RFCMOS platforms , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[13]  D. Dutartre,et al.  An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter , 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

[14]  S.P. Voinigescu,et al.  Low-Power Circuits for a 2.5-V, 10.7-to-86-Gb/s Serial Transmitter in 130-nm SiGe BiCMOS , 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

[15]  P. Chevalier,et al.  Experimental Study of Metallic Emitter SiGeC HBTs , 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.