论文信息 - Ultrafast dynamics of semiconductor interband transitions in THz fields up to 4 MV/cm - 字舞流文

Ultrafast dynamics of semiconductor interband transitions in THz fields up to 4 MV/cm

Phase-locked multi-THz transients bias semiconductors far above the usual threshold for dielectric breakdown. Few-cycle NIR pulses synchronized to the THz transients on an as-timescale, probe interband transitions under electric fields of 4 MV/cm.

A. Leitenstorfer | B. Mayer | R. Huber | A. Sell | S. Mahrlein | F. Junginger | O. Schubert | C. Schmidt

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