Defect behavior and control in advanced CMOs process technologies

This paper aims at reviewing defect behavior and control during CMOS processing. As this is a very broad field that has extensively been studied since the beginning of the integrated circuit technology development, only some important processing modules are discussed and illustrated by typical defect behavior. Attention is given to isolation schemes, residual implantation damage, gate dielectrics, silicidation and alternative substrates such as Silicon-on-Insulator (SOI), SiGe and Ge. The goal is not to present a historical overview, but rather to concentrate on the present understanding and evolution in the field.