Semiconductor saturable absorber mirror structures with low saturation fluence

[1]  U. Keller,et al.  Passively mode-locked 1.3-/spl mu/m multi-GHz Nd:YVO/sub 4/ lasers with low timing jitter , 2005, IEEE Photonics Technology Letters.

[2]  U. Keller,et al.  Towards wafer-scale integration of high repetition rate passively mode-locked surface-emitting semiconductor lasers , 2005, CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005..

[3]  U. Keller,et al.  1.5 /spl mu/m GaInNAs semiconductor saturable absorber for passively modelocked solid-state lasers , 2005 .

[4]  U. Keller,et al.  New regime of inverse saturable absorption for self-stabilizing passively mode-locked lasers , 2005 .

[5]  Rüdiger Paschotta,et al.  Picosecond pulse sources with multi-GHz repetition rates and high output power , 2004 .

[6]  A. Stintz,et al.  Optical absorption cross section of quantum dots , 2004 .

[7]  Ursula Keller,et al.  Optical characterization of semiconductor saturable absorbers , 2004 .

[8]  Rachel Grange,et al.  Low-loss GaInNAs saturable absorber mode locking a 1.3-μm solid-state laser , 2004 .

[9]  K. Weingarten,et al.  Passively mode-locked 40-GHz Er:Yb:glass laser , 2003, Conference on Lasers and Electro-Optics, 2004. (CLEO)..

[10]  U. Keller.  Recent developments in compact ultrafast lasers , 2003, Nature.

[11]  U. Keller,et al.  Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers , 2003, CLEO 2003.

[12]  Rüdiger Paschotta,et al.  Compact Nd:YVO/sub 4/ lasers with pulse repetition rates up to 160 GHz , 2002 .

[13]  Rüdiger Paschotta,et al.  Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers , 2001 .

[14]  U. Keller.  Ultrafast solid-state lasers , 2000, Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505).

[15]  U. Keller,et al.  Optical nonlinearity in low-temperature-grown GaAs: Microscopic limitations and optimization strategies , 1999 .

[16]  Eicke R. Weber,et al.  Femtosecond response times and high optical nonlinearity in beryllium-doped low-temperature grown GaAs , 1999 .

[17]  Rüdiger Paschotta,et al.  Q-switching stability limits of continuous-wave passive mode locking , 1999 .

[18]  Ursula Keller,et al.  Chapter 4 – Semiconductor Nonlinearities for Solid-State Laser Modelocking and Q-Switching , 1998 .

[19]  Kouji Nakahara,et al.  GaInNAs: a novel material for long-wavelength semiconductor lasers , 1997 .

[20]  F. Kärtner,et al.  Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers , 1996 .

[21]  U. Keller,et al.  All-in-one dispersion-compensating saturable absorber mirror for compact femtosecond laser sources. , 1995, Optics letters.

[22]  U. Keller,et al.  Scaling of the antiresonant Fabry-Perot saturable absorber design toward a thin saturable absorber. , 1995, Optics letters.

[23]  J. A. Walker,et al.  Antiresonant Fabry-Perot quantum well modulator to actively modelock and synchronise solid-state lasers , 1995 .

[24]  F. Kärtner,et al.  Self-starting soliton modelocked Ti-sapphire laser using a thin semiconductor saturable absorber , 1995 .

[25]  Elsa Garmire,et al.  Nonlinear Optics in Semiconductors , 1994 .

[26]  D. Miller,et al.  Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry-Perot saturable absorber. , 1992, Optics letters.

[27]  P. D. Dapkus,et al.  Nonlinear Bragg reflector based on saturable absorption , 1989 .

[28]  T. Drummond,et al.  Single crystal, epitaxial multilayers of AlAs, GaAs, and AlxGa1−xAs for use as optical interferometric elements , 1986 .