100 GHz on-wafer S-parameter measurements by electrooptic sampling

The authors describe an electrooptic sampling system with a measurement bandwidth in excess of 200 GHz for on-wafer millimeter-wave measurements. An active probe frequency-multiplier has been developed to supply the millimeter-wave stimulus signal to the device under test. On-wafer measurements of S-parameters of linear circuits, time-waveforms of nonlinear circuits, and propagation characteristics of uniplanar waveguides on GaAs to 100 GHz by direct electrooptic sampling have been demonstrated.<<ETX>>