Analysis of surface radiation damage effects at HL-LHC fluences: Comparison of different technology options
暂无分享,去创建一个
D. Passeri | G. Bilei | A. König | T. Bergauer | M. Dragicevic | S. Mattiazzo | F. Moscatelli | G. Betta | A. Morozzi | V. Hinger
[1] D. Passeri,et al. Surface damage characterization of FBK devices for High Luminosity LHC (HL-LHC) operations , 2017 .
[2] D. Passeri,et al. Effects of Interface Donor Trap States on Isolation Properties of Detectors Operating at High-Luminosity LHC , 2017, IEEE Transactions on Nuclear Science.
[3] D. Passeri,et al. A combined surface and bulk TCAD damage model for the analysis of radiation detectors operating at HL-LHC fluences , 2016 .
[4] D. Passeri,et al. Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations , 2016, IEEE Transactions on Nuclear Science.
[5] R. Klanner,et al. Optimization of the radiation hardness of silicon pixel sensors for high x-ray doses using TCAD simulations , 2011, 1111.4901.
[6] Hanno Perrey,et al. Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivity n-type silicon. , 2011, Journal of synchrotron radiation.
[7] K. Hoffmann. Campaign to identify the future CMS tracker baseline , 2011 .
[8] R. Klanner,et al. Study of X-ray radiation damage in silicon sensors , 2011, 1111.1180.
[9] K. Hara,et al. Optimization of surface structures in n-in-p silicon sensors using TCAD simulation , 2011 .
[10] peixiong zhao,et al. Oxide Traps, Border Traps, and Interface Traps in SiO2 , 2008 .
[11] R. Bates,et al. Simulations of radiation-damaged 3D detectors for the Super-LHC , 2008 .
[12] D. Passeri,et al. Numerical Simulation of Radiation Damage Effects in p-Type and n-Type FZ Silicon Detectors , 2006, IEEE Transactions on Nuclear Science.
[13] D. Bisello,et al. X-ray radiation source for total dose radiation studies , 2004 .
[14] P. Ciampolini,et al. Comprehensive modeling of bulk-damage effects in silicon radiation detectors , 2001 .
[15] G. Verzellesi,et al. On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes , 1999 .
[16] P. Winokur,et al. Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors , 1986 .