论文信息 - Structural properties of Y2O3 thin films grown on Si(100) and Si(111) substrates - 字舞流文

Structural properties of Y2O3 thin films grown on Si(100) and Si(111) substrates

Ivo Vávra | I. Vávra | Kristína Hušeková | S. Harasek | Š. Chromík | J. Šoltýs | S. Harasek | M. Španková | Stefan Chromik | R. Lupták | R. Lupták | K. Hušeková | M. Španková | J. Soltýs

[1] H. Ishiwara,et al. Roles of Buffer Layers in Epitaxial Growth of SrTiO3 Films on Silicon Substrates , 1994 .

[2] I. Vávra,et al. Epitaxial YBa2Cu3O7 superconducting films, without twin planes on Y2O3/YSZ/Si , 1994 .

[3] R. Horng,et al. Effects of rapid thermal process on structural and electrical characteristics of Y2O3 thin films by r.f.-magnetron sputtering , 1996 .

[4] I. Vávra,et al. The problems of native SiO2 layer removing for epitaxial growth of YSZ film on Si , 1997 .

[5] M. Cho,et al. Effects of SiO2 overlayer at initial growth stage of epitaxial Y2O3 film growth , 2000 .

[6] R. Ivanic,et al. Sputtered yttrium oxide thin films appropriate for electrochemical sensors , 2001 .

[7] A. Dimoulas,et al. Direct heteroepitaxy of crystalline Y2O3 on Si (001) for high-k gate dielectric applications , 2001 .

[8] J. Yi,et al. Improved interface properties of yttrium oxide buffer layer on silicon substrate for ferroelectric random access memory applications , 2002 .

[9] Structural characterization of epitaxial Y2O3 on Si (0 0 1) and of the Y2O3/Si interface , 2004 .