论文信息 - The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy - 字舞流文

The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy

A. Milnes | A. Polyakov | A. Govorkov | N. Smirnov | E. Kozhukhova | A. A. Balmashnov | L. M. Dolginov | I. V. Tunitskaya | O. M. Borodina | L. Druzhinina | G. V. Vinogradova