Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment
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V. Lysenko | S. Ashok | A. Vasin | A. Rusavsky | V. Kushnirenko | S. Kolesnik | A. A. Konchits | A. Nazarov
[1] I. Pereyra,et al. Annealing effects of highly homogeneous a-Si1−xCx:H , 2003 .
[2] S. B. Patil,et al. Revisiting the B-factor variation in a-SiC:H deposited by HWCVD , 2003 .
[3] Yue Wang,et al. Multiphase structure of hydrogenated amorphous silicon carbide thin films , 2002 .
[4] G. Foti. Silicon carbide: from amorphous to crystalline material , 2001 .
[5] M. Khakani,et al. Comparative EPR study of hydrogenated and unhydrogenated amorphous silicon carbide thin films , 2001 .
[6] Rusli,et al. Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide , 2001 .
[7] K. Zellama,et al. Spins and microstructure of hydrogenated amorphous carbon: A multiple frequency electron paramagnetic resonance study , 2001 .
[8] Paramagnetic defects in silicon carbide grains embedded in SiO2 matrix , 2001 .
[9] Rusli,et al. Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition , 2001 .
[10] L. Calcagno,et al. Growth and characterization of SiC layers obtained by microwave-CVD , 2001 .
[11] R. Nemanich,et al. Optical characterization of wide band gap amorphous semiconductors (a-Si:C:H): Effect of hydrogen dilution , 2001 .
[12] P. Kelly,et al. Magnetron sputtering: a review of recent developments and applications , 2000 .
[13] S. S. Camargo,et al. Annealing effects on near stoichiometric a-SiC:H films , 1999 .
[14] Yinyue Wang,et al. Effects of high-temperature annealing on the structure of reactive sputtering a-SiC:H films , 1998 .
[15] L. Magafas,et al. The effect of thermal annealing on the optical properties of a-SiC:H films , 1998 .
[16] F. C. Loh,et al. Infrared and x-ray photoelectron spectroscopy studies of as-prepared and furnace-annealed radio-frequency sputtered amorphous silicon carbide films , 1998 .
[17] S. R. Silva,et al. An EPR study of defects in hydrogenated amorphous carbon thin films , 1998 .
[18] J. Robertson,et al. Paramagnetic centres in tetrahedral amorphous carbon , 1997 .
[19] P. Mascher,et al. Effect of annealing on the defect structure in a‐SiC:H films , 1996 .
[20] Chuang‐Chuang Tsai,et al. Luminescence of a-Si:C:H alloys deposited with hydrogen dilution , 1995 .
[21] W. F. V. D. Weg,et al. Effect of hydrogen dilution on the bonding configurations in a-SiC:H , 1994 .
[22] Weber,et al. Porous silicon and siloxene: Vibrational and structural properties. , 1993, Physical review. B, Condensed matter.
[23] P. Lange,et al. Stress modification and characterization of thin SiC films grown by plasma-enhanced chemical vapour deposition , 1992 .
[24] S. Inoue,et al. Atomic structure of amorphous Si1−xCx films prepared by r.f. sputtering , 1989 .
[25] J. Bullot,et al. Physics of Amorphous Silicon–Carbon Alloys , 1987 .
[26] Smith,et al. Optical constants of a series of amorphous hydrogenated silicon-carbon alloy films: Dependence of optical response on film microstructure and evidence for homogeneous chemical ordering. , 1987, Physical review. B, Condensed matter.
[27] H. Matsunami,et al. Preparation of hydrogenated amorphous Si-C alloy films and their properties , 1984 .
[28] Russell Messier,et al. Revised structure zone model for thin film physical structure , 1984 .
[29] R. Street. Luminescence and recombination in hydrogenated amorphous silicon , 1981 .
[30] L. Ley,et al. Bonding of fluorine in amorphous hydrogenated silicon , 1980 .
[31] R. Grigorovici,et al. Optical Properties and Electronic Structure of Amorphous Germanium , 1966, 1966.