How reliable are Hanle measurements in metals in a three-terminal geometry?

We test the validity of Hanle measurements in three-terminal devices by using aluminum (Al) and gold (Au). The obtained Hanle and inverted Hanle-like curves show an anomalous behavior. First, we measure Hanle signals 8 orders of magnitude larger than those predicted by standard theory. Second, the temperature and voltage dependences of the signal do not match with the tunneling spin polarization of the ferromagnetic contact. Finally, the spin relaxation times obtained with this method are independent of the choice of the metallic channel. These results are not compatible with spin accumulation in the metal. Furthermore, a scaling of the Hanle signal with the interface resistance of the devices suggests that the measured signal is originated in the tunnel junction.

[1]  S. Yuasa,et al.  Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium , 2012, 1211.4460.

[2]  J. Robinson,et al.  Low-resistance spin injection into silicon using graphene tunnel barriers. , 2012, Nature nanotechnology.

[3]  J. Fujisawa,et al.  Critical effect of spin-dependent transport in a tunnel barrier on enhanced Hanle-type signals observed in three-terminal geometry , 2012 .

[4]  S. Sharma,et al.  Silicon spintronics with ferromagnetic tunnel devices , 2012 .

[5]  Japan.,et al.  Investigation of the inverted Hanle effect in highly doped Si , 2012, 1207.1835.

[6]  J. George,et al.  Crossover from spin accumulation into interface states to spin injection in the germanium conduction band. , 2012, Physical review letters.

[7]  S. Yuasa,et al.  Injection and detection of spin in a semiconductor by tunneling via interface states , 2012, 1203.4034.

[8]  K. Kasahara,et al.  Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel , 2012, 1201.5950.

[9]  Chang-Yup Park,et al.  Electrical spin accumulation with improved bias voltage dependence in a crystalline CoFe/MgO/Si system , 2011 .

[10]  Y. Maeda,et al.  Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact , 2011, 1104.2658.

[11]  B. Jonker,et al.  Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts. , 2011, Nature communications.

[12]  A. Lemaître,et al.  Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface , 2011, 1101.1691.

[13]  A. Fert,et al.  Spin transport in multiterminal devices: Large spin signals in devices with confined geometry , 2010 .

[14]  Saroj P. Dash,et al.  Electrical creation of spin polarization in silicon at room temperature , 2009, Nature.

[15]  I. Schuller,et al.  Control of spin injection by direct current in lateral spin valves , 2008, 0811.0039.

[16]  A. Fert,et al.  Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor. , 2008, Physical review letters.

[17]  A. Vogel,et al.  Spin precession in lateral all-metal spin valves: Experimental observation and theoretical description , 2008 .

[18]  J. Lodder,et al.  Tunnel spin polarization versus energy for clean and doped Al2O3 barriers. , 2007, Physical review letters.

[19]  A. Fert,et al.  Semiconductors Between Spin-Polarized Sources and Drains , 2006, IEEE Transactions on Electron Devices.

[20]  W. Pratt,et al.  Spin-diffusion lengths in metals and alloys, and spin-flipping at metal/metal interfaces: an experimentalist’s critical review , 2006, cond-mat/0610085.

[21]  J. Eom,et al.  Effective spin injection in Au film from Permalloy , 2006 .

[22]  J. Eom,et al.  Electrical spin injection and accumulation in ferromagnetic/Au/ferromagnetic lateral spin valves , 2006 .

[23]  C. Adelmann,et al.  Electrical detection of spin accumulation at a ferromagnet-semiconductor interface. , 2006, Physical review letters.

[24]  T. Kimura,et al.  Estimation of spin-diffusion length from the magnitude of spin current absorption , 2005, cond-mat/0505766.

[25]  C. Marcus,et al.  Spin polarized tunneling at finite bias. , 2005, Physical review letters.

[26]  M. Tinkham,et al.  Spin-polarized tunneling in room-temperature mesoscopic spin valves , 2004 .

[27]  S. Sarma,et al.  Spintronics: Fundamentals and applications , 2004, cond-mat/0405528.

[28]  J. J. A. Baselmans,et al.  Electrical detection of spin precession in a metallic mesoscopic spin valve , 2002, Nature.

[29]  R. W. Dave,et al.  Criteria for ferromagnetic–insulator–ferromagnetic tunneling , 2002, Journal of Magnetism and Magnetic Materials.

[30]  Albert Fert,et al.  Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor , 2001 .

[31]  J. Moodera,et al.  Temperature dependence of magnetoresistance and surface magnetization in ferromagnetic tunnel junctions , 1998 .

[32]  J. Moodera,et al.  Optimum tunnel barrier in ferromagnetic–insulator–ferromagnetic tunneling structures , 1997 .

[33]  Xu,et al.  Directed inelastic hopping of electrons through metal-insulator-metal tunnel junctions. , 1995, Physical review. B, Condensed matter.

[34]  J. Simmons Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film , 1963 .