Forward-voltage capacitance of heterojunction space-charge regions

An analytical treatment is presented for modeling the capacitance of heterojunction space‐charge regions under forward voltages. First, the conventional depletion model is reviewed and the inadequacy of the use of such a model at forward voltages is noted. The study then turns to the development of a more accurate model for the thickness and potential barrier of the space‐charge region for all voltages. Based on this model and the approximation that the intrinsic level is piecewise linear with respect to position in the space‐charge region, an analytical quasistatic capacitance model applicable for forward‐biased conditions is derived. The model, however, encounters difficulties at very large forward voltages, and a qualitative treatment is employed there. The comparison of the present capacitance model with measured dependencies and with existing capacitance models is included.

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