The phase-change kinetics of amorphous Ge2Sb2Te5 and device characteristics investigated by thin-film mechanics
暂无分享,去创建一个
Young-Chang Joo | Yong-Jin Park | Ju-Young Cho | Young‐Chang Joo | Tae-Youl Yang | Yong-Jin Park | Tae-Youl Yang | Yoo-Yong Lee | Do-Hyung Kim | Yoo‐Yong Lee | Ju-Young Cho | Do-hyung Kim
[1] Frans Spaepen,et al. A microscopic mechanism for steady state inhomogeneous flow in metallic glasses , 1977 .
[2] David J. H. Cockayne,et al. Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materials , 2011 .
[3] Young‐Chang Joo,et al. Effects of dopings on the electric-field-induced atomic migration and void formation in Ge2Sb2Te5 , 2011, 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
[4] William D. Nix,et al. Mechanical properties of thin films , 1989 .
[5] Young‐Chang Joo,et al. Thermomechanical Analysis on the Phase Stability of Nitrogen-Doped Amorphous Ge2Sb2Te5 Films , 2011 .
[6] J. C. Tucker,et al. Dependence of the glass transition temperature on heating and cooling rate , 1974 .
[7] Myong R. Kim,et al. Crystal Structure and Microstructure of Nitrogen-Doped Ge2Sb2Te5 Thin Film , 2000 .
[8] Matthias Wuttig,et al. Phase-change materials: Fast transformers. , 2012, Nature materials.
[9] C. Angell. Structural instability and relaxation in liquid and glassy phases near the fragile liquid limit , 1988 .
[10] R. Ahuja,et al. Effect of dopants on the structure and properties of Ge2Sb2Te5 studied by Ab initio calculations , 2008 .
[11] Behrad Gholipour,et al. Characterization of supercooled liquid Ge2Sb2Te5 and its crystallization by ultrafast-heating calorimetry. , 2012, Nature materials.
[12] Influence of doping upon the phase change characteristics of Ge2Sb2Te5 , 2006 .
[13] A. Kellock,et al. Effect of Al and Cu doping on the crystallization properties of the phase change materials SbTe and GeSb , 2007 .
[14] H. Ticha,et al. Covalent bond approach to the glass-transition temperature of chalcogenide glasses , 1995 .
[15] Enhanced amorphous stability of carbon-doped Ge2Sb2Te5: Ab Initio investigation , 2011 .
[16] M. Lankhorst,et al. Modelling glass transition temperatures of chalcogenide glasses. Applied to phase-change optical recording materials , 2002 .
[17] Songlin Feng,et al. Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application , 2012 .
[18] Se-Young Choi,et al. Phase transition characteristics of Bi/Sn doped Ge2Sb2Te5thin film for PRAM application , 2007 .
[19] Ab initio study on influence of dopants on crystalline and amorphous Ge2Sb2Te5 , 2011 .
[20] J. Rault,et al. Origin of the Vogel-Fulcher-Tammann law in glass-forming materials : the α-β bifurcation , 2000 .
[21] Simone Raoux,et al. Crystallization dynamics of nitrogen-doped Ge2Sb2Te5 , 2009 .
[22] Crystallization behavior of amorphous Alx(Ge2Sb2Te5)1−x thin films , 2010 .
[23] M. Salinga,et al. A map for phase-change materials. , 2008, Nature materials.
[24] Yuji Mori,et al. Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phase , 2000 .
[25] Hyun-Yong Lee,et al. Characteristics of amorphous Ag0.1(Ge2Sb2Te5)0.9 thin film and its ultrafast crystallization , 2008 .
[26] Robert E. Reed-Hill,et al. Physical Metallurgy Principles , 1972 .