Sub-10 nm linewidth and overlay performance achieved with a fine-tuned EBPG-5000 TFE electron beam lithography system

For advanced nanoelectronic device concepts bridging the extended CMOS-world with the ultimate solution of single electron transistors (SETs), reliable lithography in the 10 nm (decanometer) regime has gained top priority in the past. Additionally, any type of nanoscopic 3D-device integration requires an overlay accuracy on the few-nm level. There is, however, a discrepancy between minimum feature sizes and overlay performance usually obtained with current electron beam lithography systems. We have evaluated and optimized the ultra-high resolution and overlay performance of a Leica EBPG-5000 TFE electron beam lithography system.