Combined optical/electrical simulation of CCD cell structures by means of the finite-difference time-domain method

A complete optoelectronic simulation of a CCD cell structure is presented. We combined the finite-difference time-domain method for simulation of the light propagation with electric device simulation methods based on drift/diffusion charge carrier transport models. In this way, the operation of the CCD can be modeled in a rigorous manner without simplifications of the geometry or use of approximate methods. As pixel sizes are continuously reduced, such rigorous models are of crucial importance for the analysis and optimization of the device performance.

[1]  Allen Taflove,et al.  Computational Electrodynamics the Finite-Difference Time-Domain Method , 1995 .

[2]  W. Fichtner,et al.  Rigorous electromagnetic simulation of liquid crystal displays , 1998 .

[3]  W. Fichtner,et al.  Rigorous electromagnetic simulation of CCD cell structures , 1996, Proceedings of Third International Conference on Electronics, Circuits, and Systems.

[4]  W C Liu,et al.  Vector diffraction from subwavelength optical disk structures: two-dimensional modeling of near-field profiles, far-field intensities, and detector signals from a DVD. , 1999, Applied optics.

[5]  H.C. de Graaff,et al.  Bandgap narrowing in silicon bipolar transistors , 1977, IEEE Transactions on Electron Devices.

[6]  J. Schwider,et al.  Interferometric resolution examined by means of electromagnetic theory , 1995 .

[7]  E. Wolf,et al.  Electromagnetic diffraction in optical systems, II. Structure of the image field in an aplanatic system , 1959, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[8]  M. Green Intrinsic concentration, effective densities of states, and effective mass in silicon , 1990 .

[9]  Nobukazu Teranishi,et al.  Optical limitations to cell size reduction in IT-CCD image sensors , 1996 .

[10]  P. Regli,et al.  Combination of device simulation with computational electromagnetics , 1997, RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294).

[11]  Stephen D. Gedney,et al.  Time-domain analysis of periodic structures at oblique incidence: orthogonal and nonorthogonal FDTD implementations , 1998 .

[12]  Optical-electronic simulation of a GaAs metal-semiconductor-metal (MSM) photodetector , 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

[13]  Massimo Vanzi,et al.  A physically based mobility model for numerical simulation of nonplanar devices , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[14]  Charles M. Snell,et al.  Time-dependent model for vertical-cavity surface-emitting laser , 1995, Photonics West.

[15]  G. Masetti,et al.  Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon , 1983, IEEE Transactions on Electron Devices.

[16]  H. Mutoh,et al.  Simulation for 3-D optical and electrical analysis of CCD , 1997 .

[17]  J. Yamauchi,et al.  Analysis of optical waveguides with high-reflection coatings using the FD-TD method , 1998, IEEE Photonics Technology Letters.

[18]  Robert J. Lee,et al.  On the Accuracy of Numerical Wave Simulations Based on Finite Methods , 1992 .

[19]  John T. Sheridan,et al.  Imaging periodic surface relief structures , 1995 .

[20]  J. Joannopoulos,et al.  High Transmission through Sharp Bends in Photonic Crystal Waveguides. , 1996, Physical review letters.

[21]  V. S. Vavilov On photo-ionization by fast electrons in germanium and silicon , 1959 .

[22]  J. Slotboom,et al.  The pn-product in silicon , 1977 .

[23]  Jerry G. Fossum,et al.  A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon , 1982 .