Continuously operated visible‐light‐emitting lasers using liquid‐phase‐epitaxial InGaPAs grown on GaAs substrates

Continuously operated visible‐light‐emitting InGaPAs lasers are fabricated using liquid‐phase‐epitaxial wafers grown on a GaAs substrate. The wavelength is 785 nm. The lowest threshold current is 80 mA (6 kA/cm2 in current density). The highest quantum efficiency is 33%. The characteristic temperature is 135 K. The InGaPAs lasers free from dark line defects are presumably grown on GaAs.

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