Static 7 GHz frequency divider IC based on a 2 μm Si bipolar technology
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A static 8:1 frequency divider IC operating at up to 7 GHz has been realised using a preproduction silicon bipolar technology with 2 μm lithography. This technology is characterised by a self-aligned double polysilicon emitter-base structure and oxide wall isolation. The high upper frequency limit, not yet achieved with comparable 2 μm technologies, was attained by careful circuit design and optimisation.
[1] M. Ida,et al. An 11-GHz GaAs frequency divider using source-coupled FET Logic , 1986, IEEE Electron Device Letters.
[2] M. Suzuki,et al. A 9-GHz frequency divider using Si bipolar super self-aligned process technology , 1985, IEEE Electron Device Letters.
[3] A. W. Wieder. Self-aligned bipolar technology. New chances for very-high-speed digital integrated circuits , 1984 .
[4] R. Ranfft,et al. A simple but efficient analog computer for simulation of high-speed integrated circuits , 1977, IEEE Journal of Solid-State Circuits.