论文信息 - Enhanced Intrinsic Gain (gm/gd) of PMOSFETs with a Si

Enhanced Intrinsic Gain (gm/gd) of PMOSFETs with a Si

PMOSFETs with a Si0.7Ge0.3 channel were fabricated. The intrinsic gain of the Si0.7Ge0.3 channel PMOSFET was compared to a reference Si PMOSFET, and was found to be enhanced by about 20 to 30 % for all gate lengths down to 0.3 Pm. This enhancement is attributed to an increased effective mobility in the Si0.7Ge0.3 channel. The inclusion of a Si0.7Ge0.3 channel was found to degrade neither the output conductance (go) nor the breakdown voltage.

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