The growth and properties of group III nitrides

[1]  S. Nakamura,et al.  Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes , 1994 .

[2]  X. Hou,et al.  Molecular‐beam‐epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source , 1994 .

[3]  Y. Shiraki,et al.  Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs , 1994 .

[4]  Hadis Morkoç,et al.  Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe , 1993 .

[5]  K. Onabe,et al.  MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine , 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

[6]  S. Fujieda,et al.  Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments , 1991 .

[7]  Sadafumi Yoshida,et al.  Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy , 1991 .

[8]  Theodore D. Moustakas,et al.  Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon , 1991 .

[9]  W. J. Choyke,et al.  An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy , 1991 .

[10]  D. G. Weir,et al.  Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films , 1991 .

[11]  R. Davis III-V nitrides for electronic and optoelectronic applications , 1991, Proc. IEEE.

[12]  R. M. Kolbas,et al.  Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition , 1991 .

[13]  Robert F. Davis,et al.  Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy , 1989 .

[14]  C. Foxon,et al.  Composition effects in the growth of Ga(In)AsyP1-y alloys by MBE , 1980 .

[15]  C. T. Foxon,et al.  Auger investigation of group III nitride films grown by molecular beam epitaxy , 1995 .

[16]  J. Pankove Perspective On Gallium Nitride , 1989 .

[17]  J. Karpinski,et al.  Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN , 1984 .