Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor

Gallium oxide is a wide-bandgap semiconductor material which is being developed for a range of electronic and electrooptic device applications. Commercial implementation of these devices will require production-scale technology for Ga2O3 film deposition. This work demonstrated deposition of uniform Ga2O3 films on both 50-mm-diameter (0001) sapphire and 200-mm-diameter (100) silicon substrates, using a rotating disc metalorganic chemical vapor deposition reactor. The source reactants were trimethylgallium and oxygen. The resulting Ga2O3 films were smooth, optically transparent, and highly insulating and had excellent thickness uniformity. Ga2O3 films deposited on (0001) sapphire at temperatures of at least 600°C and pressures of at least 45 Torr consisted of ($$\overline{ 2} 0 1$$2¯01)-oriented β-Ga2O3 in the as-deposited state. The β-crystal structure was shown to be stable on annealing to 800°C, in either air or nitrogen atmosphere. A Ga2O3 film deposited at a lower temperature was shown to crystallize to a similar ($$\overline{ 2} 0 1$$2¯01)-oriented β-Ga2O3 structure on postdeposition annealing at 800°C.

[1]  Bin Li,et al.  Growth and spectral characterization of β-Ga2O3 single crystals , 2006 .

[2]  Nam Ho Kim,et al.  Annealing effects on the properties of Ga2O3 thin films grown on sapphire by the metal organic chemical vapor deposition , 2004 .

[3]  S. Fujita,et al.  Thermal stability of single crystalline alpha gallium oxide films on sapphire substrates , 2013 .

[4]  W. S. Hobson,et al.  Ga2O3 films for electronic and optoelectronic applications , 1995 .

[5]  Hideo Hosono,et al.  Deep-ultraviolet transparent conductive β-Ga2O3 thin films , 2000 .

[6]  Akito Kuramata,et al.  Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates , 2012 .

[7]  H. H. Tippins.  Optical Absorption and Photoconductivity in the Band Edge of β − Ga 2 O 3 , 1965 .

[8]  Yoshitaka Toyoda,et al.  High Temperature Oxygen Sensor Using a Pt–Ga2O3–Pt Sandwich Structure , 2004 .

[9]  Jin Ma,et al.  Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique , 2012 .

[10]  Ray-Hua Horng,et al.  Thermal annealing effect on material characterizations of β-Ga2O3 epilayer grown by metal organic chemical vapor deposition , 2013 .

[11]  Shinji Nakagomi,et al.  Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate , 2012 .

[12]  H. Lee,et al.  Metal–oxide–semiconductor devices using Ga2O3 dielectrics on n-type GaN , 2003 .

[13]  Z. Liying,et al.  Structural and optical properties of Zn-doped β-Ga 2 O 3 films , 2012 .

[14]  K. Shimamura,et al.  Rf-plasma-assisted molecular-beam epitaxy of β-Ga2O3 , 2006 .

[15]  Akito Kuramata,et al.  Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics , 2013 .

[16]  L. Tu,et al.  Effects of crystallinity and point defects on optoelectronic applications of β-Ga₂O₃ epilayers. , 2013, Optics express.

[17]  M. Passlack,et al.  In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxy , 2011 .

[18]  Shinji Nakagomi,et al.  Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors , 2007 .

[19]  William G. Breiland,et al.  Design and Verification of Nearly Ideal Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor , 1991 .

[20]  Shi Yi,et al.  Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition , 2008 .

[21]  Zbigniew Galazka,et al.  Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE , 2014 .

[22]  Zhen Zhu,et al.  Epitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal–organic chemical vapor deposition , 2012 .

[23]  Marilena Bartic,et al.  Oxygen sensing properties at high temperatures of β-Ga2O3 thin films deposited by the chemical solution deposition method , 2007 .

[24]  Won-Jae Lee,et al.  Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition , 2005 .

[25]  W. Breiland,et al.  Design and operating characteristics of a metalorganic vapor phase epitaxy production scale, vertical, high speed, rotating disk reactor , 1994 .

[26]  Ray-Hua Horng,et al.  Healing of Surface States and Point Defects of Single-Crystal β-Ga2O3 Epilayers , 2012 .