论文信息 - Doping Efficiency and Deep Traps in MOCVD-Grown InGaAlP as Influenced by Stoichiometry and Hydrogen Passivation - 字舞流文

Doping Efficiency and Deep Traps in MOCVD-Grown InGaAlP as Influenced by Stoichiometry and Hydrogen Passivation

A. Polyakov | A. Govorkov | N. Smirnov | A. A. Balmashnov | B. M. Leiferov | E. Popova | A. A. Chelniy | V. A. Gorbylev | A. Chekalin | S. J. Peaon | V. A. Kusikov