Cavity Enhanced Internal Photoemission Effect in Silicon Photodiode for Sub-Bandgap Detection

In this paper, a new approach for the near infrared sub-bandgap detection in Si-based devices is investigated. In particular, the design, the realization and the characterization of a back illuminated silicon resonant cavity enhanced Schottky photodetectors, working at 1.55 μm, are reported. The photodetectors are constituted by Fabry-Perot microcavity incorporating a Schottky diode. The working principle is based on the internal photoemission effect enhanced by cavity effect. Performances devices in terms of responsivity, free spectral range, finesse and estimated bandwidth are reported.

[1]  Ajeet Rohatgi,et al.  Spectroscopic ellipsometry characterization of thin-film silicon nitride , 1997 .

[2]  W. Kern.  Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology , 1970 .

[3]  M. Morse,et al.  31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate. , 2007, Optics express.

[4]  G. Jellison,et al.  Parameterization of the optical functions of amorphous materials in the interband region , 1996 .

[5]  R. Fowler,et al.  The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures , 1931 .

[6]  D. K. Schroder,et al.  Free carrier absorption in silicon , 1978 .

[7]  Gerald Earle Jellison,et al.  The calculation of thin film parameters from spectroscopic ellipsometry data , 1996 .

[8]  M.K. Emsley,et al.  High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates , 2002, IEEE Photonics Technology Letters.

[9]  G. Assanto,et al.  Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors , 2007, IEEE Photonics Technology Letters.

[10]  W. Kosonocky,et al.  160 × 244 Element PtSi Schottky-barrier IR-CCD image sensor , 1985, IEEE Transactions on Electron Devices.

[11]  Horst Zimmermann.  Silicon Photo-Receivers , 2004 .

[12]  Silvano Donati,et al.  Photodetectors: Devices, Circuits and Applications , 1999 .

[13]  Luigi Moretti,et al.  Silicon resonant cavity enhanced photodetectors at 1.55 μm , 2005, SPIE Microtechnologies.

[14]  Luigi Moretti,et al.  SILICON RESONANT CAVITY ENHANCED PHOTODETECTOR BASED ON THE INTERNAL PHOTOEMISSION EFFECT , 2008 .

[15]  J. Muszalski,et al.  Resonant cavity enhanced photonic devices , 1995 .

[16]  H. Norde.  A modified forward I‐V plot for Schottky diodes with high series resistance , 1979 .

[17]  D. Aspnes,et al.  Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry , 1979 .

[18]  Rasit Turan,et al.  On the internal photoemission spectrum of PtSi/p-Si infrared detectors , 2002 .

[19]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[20]  G. Lo,et al.  Low-Cost and High-Speed SOI Waveguide-Based Silicide Schottky-Barrier MSM Photodetectors for Broadband Optical Communications , 2008, IEEE Photonics Technology Letters.

[21]  Luigi Moretti,et al.  A silicon compatible resonant cavity enhanced photodetector working at 1.55 µm , 2008 .

[22]  X. Le Roux,et al.  Germanium photodetector integrated in a Silicon-On-Insulator microwaveguide , 2007, 2007 4th IEEE International Conference on Group IV Photonics.

[23]  Gianlorenzo Masini,et al.  2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 μm , 2003 .

[24]  H. Card,et al.  Aluminum—Silicon Schottky barriers and ohmic contacts in integrated circuits , 1976, IEEE Transactions on Electron Devices.

[25]  V. E. Vickers,et al.  Model of schottky barrier hot-electron-mode photodetection. , 1971, Applied optics.

[26]  K. Vedam.  Spectroscopic ellipsometry: a historical overview , 1998 .

[27]  G. Jellison,et al.  Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics. , 1997, Applied optics.

[28]  Luigi Moretti,et al.  Back-illuminated silicon resonant cavity-enhanced photodetector at 1550 nm , 2009 .

[29]  E. Palik.  Handbook of Optical Constants of Solids , 1997 .

[30]  E. H. Rhoderick,et al.  Metal–Semiconductor Contacts , 1979 .

[31]  A. Carballar,et al.  Internal field distributions in fiber Bragg gratings , 1997, IEEE Photonics Technology Letters.

[32]  M.K. Emsley,et al.  High speed resonant-cavity enhanced Ge photodetectors on reflecting Si substrates for 1550 nm operation , 2004, The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004..

[33]  Kazumi Wada,et al.  High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform , 2005 .