Resistive damping implementation as a method to improve controllability in stiff ohmic RF-MEMS switches

This paper presents in detail the entire procedure of calculating the bias resistance of an ohmic RF-MEMS switch, controlled under resistive damping (charge drive technique). In case of a very stiff device, like the North Eastern University switch, the actuation control under resistive damping is the only way to achieve controllability. Due to the short switching time as well as the high actuation voltage, it is not practical to apply a tailored control pulse (voltage drive control technique). Implementing a bias resistor of 33 MΩ in series with the voltage source, the impact velocity of the cantilever has been reduced 80 % (13.2 from 65.9 cm/s), eliminating bouncing and high initial impact force during the pull-down phase. However, this results in an affordable cost of switching time increase from 2.38 to 4.34 μs. During the release phase the amplitude of bouncing has also been reduced 34 % (174 from 255 nm), providing significant improvement in both switching operation phases of the switch.