All-solid-source molecular beam epitaxy for growth of III–V compound semiconductors

Abstract All-solid-source molecular beam epitaxy (SS-MBE) is a novel variant of MBE. It allows for toxic-gas-free growth of III–V compound semiconductors, including phosphides. We have examined the quality of SS-MBE-grown phosphorus containing heterostructures and laser diodes. The results discussed in this article show that state-of-the-art quantum well (QW) materials and lasers, covering a wide range of bandgaps from red to infrared, can be prepared by SS-MBE.

[1]  John P. R. David,et al.  Solid‐source molecular beam epitaxy growth of GaInP and GaInP‐containing quantum wells , 1994 .

[2]  Marina Settembre,et al.  Comparison of the performance of optically amplified transmission systems , 1996 .

[3]  A. Cho,et al.  Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorus , 1994 .

[4]  M. Pessa,et al.  High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy , 1996, IEEE Photonics Technology Letters.

[5]  M. Pessa,et al.  GaInAsP gas-source MBE technology , 1995 .

[6]  A. Y. Cho,et al.  GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells , 1995 .

[7]  M. Pessa,et al.  High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy , 1996, IEEE Photonics Technology Letters.

[8]  Eoin P. O'Reilly,et al.  Role of radiative and nonradiative processes on the temperature sensitivity of strained and unstrained 1.5 μm InGaAs(P) quantum well lasers , 1995 .

[9]  M. Reiche,et al.  Characterization of Interfaces of Directly Bonded Silicon Wafers: A Comparative Study of Secondary Ion Mass Spectroscopy Multiple Internal Reflection Spectroscopy, and Transmission Electron Microscopy , 1996 .

[10]  P. Colombo,et al.  Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy , 1991 .

[11]  J. Dickmann,et al.  Growth of high-quality InGaP and application for modulation-doped structure by molecular beam epitaxy with a GaP source , 1995 .