论文信息 - A 2-W Ku-Band Monolithic GaAs FET Amplifier

A 2-W Ku-Band Monolithic GaAs FET Amplifier

A monolithic three-stage Ku-band GaAs FET power amplifier has been designed, fabricated. Epitaxial layers are grown by molecular beam epitaxy FETs have a source overlay geometry with the n+ ledge channel structure. The amplifiers have up to 2 W output power at 16.5 GHz with 12 dB gain, 20% efficiency.

H. D. Shih | H. M. Macksey | H. Q. Tserng

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