论文信息 - Native grown plasma oxides and inversion layers on InGaAs

Native grown plasma oxides and inversion layers on InGaAs

Native plasma oxides which are water insoluble have been grown on both n‐ and p‐type epilayers of In0.53Ga0.47As. For each case, capacitance‐voltage measurements show that the surfaces can be varied from strong accumulation to strong inversion. The oxide resistivity is of order 1012 Ω cm, while the breakdown field is of order 106 V/cm.

B. Tell | R. Leheny | R. Nahory | J. Winter

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