论文信息 - Optical study of GaAs/GaAlAs quantum structures processed by high energy focused ion beam implantation

Optical study of GaAs/GaAlAs quantum structures processed by high energy focused ion beam implantation

A high energy focused ion beam (Ga+, 150 keV) is used to implant and interdiffuse quantum well structures. Optical properties of wires and boxes created by this technique are evaluated by low temperature cathodoluminescence spectroscopy and imaging. We propose two different approaches to optimize the interdiffusion induced energy shift. We show the large energy shifts observed in the narrow wires and boxes (below 4000 A) are dominated by straggling effects.

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