论文信息 - Dielectric performance of low temperature silicon nitride films in a-Si:H TFTs

Dielectric performance of low temperature silicon nitride films in a-Si:H TFTs

We report on properties of amorphous silicon nitride (a-SiNx:H) films deposited by 13.56 MHz plasma enhanced chemical vapor deposition (PECVD) at 120 C and their performance as a gate dielectric in amorphous hydrogenated silicon (a-Si:H) thin film transistors (TFTs). It was found that the films with [N]/[Si] ratio higher and lower than about 1.5 can be clearly distinguished due to different physical properties, structure of electronic defects and better electrical quality of more N-rich materials. a-Si:H TFTs incorporating N-rich a-SiNx:H dielectric layers exhibited field effect mobility of 0.9–1 cm 2 =V s, threshold voltage of 4 V, subthreshold slope of 0.5 V/dec, OFF-current � 1 pA and ON/OF ratio more than 10 6 . 2002 Elsevier Science B.V. All rights reserved.

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