论文信息 - On the structures of hydrogen-associated defect centers in irradiated high-purity a-SiO2:OH

On the structures of hydrogen-associated defect centers in irradiated high-purity a-SiO2:OH

Electron spin resonance (ESR) studies of γ-irradiated high OH and high OH + OD silica have shown that a weak pair of lines with a 238-Gauss separation is the 29 Si hyperfine structure (hfs) associated with the wellknown 74-Gauss proton doublet. This result supports the models of Vitko and Radtsig for this defect. In addition, the ESR spectrum of the well-known 10.4-Gauss doublet was computer simulated using the same distribution of g values as characterizes the silicon E′ center. It is concluded that both the 74- and 10.4-Gauss doublets are manifestations of E′-type defects associated with protons.

David L. Griscom | Tsung-Ein Tsai | D. Griscom | T. Tsai

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