Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

In this letter, the effects of the interface acceptor-like traps on the transient responses of AlGaN/GaN high-electron mobility transistors (HEMTs) are investigated by means of experimental measurements and numerical simulations. The variation trends of the drain current <i>I</i><sub>DS</sub> stimulated by the gate (<i>V</i><sub>GS</sub>) and drain (<i>V</i><sub>DS</sub>) turn-on voltage pulses have been analyzed. The successive numerical simulations are carried out on the test structure, into which a trapping region at the AlGaN/GaN interface is introduced. The same variation trends are observed on both of the simulated <i>V</i><sub>GS</sub> and <i>V</i><sub>DS</sub> turn-on pulse measurements. The observation proves that the interface acceptor-like trap is the factor dominating the turn-on transient response of the HEMT devices.

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