Characterization of Microstrip-to-Slotline Transition Discontinuites by Transverse Resonance Analysis

A method of analysis is described for characterizing the discontinuities of microstrip-to-slotline transition in a rigorous manner. The method of analysis is based on the generalized transverse resonant technique extended here to four-port configurations. The technique is used for determination of resonant structure at a given frequency and subsequently the equivalent circuit parameters of the discontinuities.