论文信息 - Epitaxial growth of an Al/CaF2/Al/Si(111) structure

Epitaxial growth of an Al/CaF2/Al/Si(111) structure

Despite their large lattice mismatch (∼25%), epitaxial CaF2 films have been grown on single crystal Al(111) on Si(111) by low temperature molecular beam epitaxy. X‐ray diffraction shows that the orientations of the CaF2 are the same as those of the Al films, whether the orientations of the Al are the same rotated 180° or with respect to the underlying Si substrate. Furthermore, our successful fabrication of an epitaxial Al/CaF2/Al/Si(111) structure suggests that Al can be a useful conductor material in three‐dimensional device integration.

H. Tsai | C. Cho | H. Liu

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