Electrical switching behavior from ultrathin potential barrier of self-assembly molecules tuned by interfacial charge trapping

The investigation of the self-assembly molecules of n-octyltrichlorosilane (OTS) as an ultrathin potential barrier in an organic two-terminal structure is presented. Electrical switching behavior with a large increase in current density is observed, and the mechanism of the electrical transition is mainly related to the OTS potential barrier tuned by charge trapping at the interface of OTS with the organic semiconductor layer. The switching behavior reveals the importance of the interfacial properties of self-assembly molecules in controlling the vertical charge transport.

[1]  Hyoyoung Lee,et al.  Molecular monolayer nonvolatile memory with tunable molecules. , 2009, Angewandte Chemie.

[2]  Hyoyoung Lee,et al.  Electron transport processes in on/off states of a single alkyl-tailed metal complex molecular switch , 2009 .

[3]  M. Ratner,et al.  Molecular Self‐Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin‐Film Transistor Applications , 2009 .

[4]  D. Ielmini,et al.  Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices , 2009, IEEE Transactions on Electron Devices.

[5]  Henning Sirringhaus,et al.  Charge Trapping in Intergrain Regions of Pentacene Thin Film Transistors , 2008 .

[6]  V. Podzorov,et al.  Electronic functionalization of the surface of organic semiconductors with self-assembled monolayers. , 2007, Nature materials.

[7]  J. C. Scott,et al.  Nonvolatile Memory Elements Based on Organic Materials , 2007 .

[8]  S. O’Shea,et al.  Metallization for crossbar molecular devices , 2007 .

[9]  P. Heremans,et al.  Microscopic description of elementary growth processes and classification of structural defects in pentacene thin films. , 2007, The journal of physical chemistry. B.

[10]  Yang Yang,et al.  Patterning organic single-crystal transistor arrays , 2006, Nature.

[11]  S. Sze,et al.  Physics of Semiconductor Devices: Sze/Physics , 2006 .

[12]  Hylke B. Akkerman,et al.  Towards molecular electronics with large-area molecular junctions , 2006, Nature.

[13]  Tobin J. Marks,et al.  Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics , 2005 .

[14]  G. Whitesides,et al.  Self-assembled monolayers of thiolates on metals as a form of nanotechnology. , 2005, Chemical reviews.

[15]  C. Goldmann,et al.  Effects of Polarized Organosilane Self-Assembled Monolayers on Organic Single-Crystal Field-Effect Transistors , 2004, cond-mat/0407407.

[16]  J. Rogers,et al.  Intrinsic charge transport on the surface of organic semiconductors. , 2004, Physical review letters.

[17]  F. Schreiber Structure and growth of self-assembling monolayers , 2000 .

[18]  A. Ulman,et al.  Formation and Structure of Self-Assembled Monolayers. , 1996, Chemical reviews.

[19]  H. Grubin The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[20]  A. Rothwarf,et al.  Metal–Semiconductor Contacts , 1979 .

[21]  C. Mead,et al.  Barrier Height Studies on Metal-Semiconductor Systems , 1963 .

[22]  Edsger C. P. Smits,et al.  University of Groningen Manipulation of charge carrier injection into organic field-effect transistors by self-assembled monolayers of alkanethiols , 2007 .