High-speed uni-traveling carrier photodiode for 2  μm wavelength application

Current optical communication systems operating at the 1.55 μm wavelength band may not be able to continually satisfy the growing demand on data capacity within the next few years. Opening a new spectral window around the 2 μm wavelength with recently developed hollow-core photonic bandgap fiber and a thulium-doped fiber amplifier is a promising solution to increase transmission capacity due to the low-loss and wide-bandwidth properties of these components at this wavelength band. However, as a key component, the performance of current high-speed photodetectors at the 2 μm wavelength is still not comparable with those at the 1.55 μm wavelength band, which chokes the feasibility of the new spectral window. In this work, we demonstrate, for the first time to our knowledge, a high-speed uni-traveling carrier photodiode for 2 μm applications with InGaAs/GaAsSb type-II multiple quantum wells as the absorption region, which is lattice-matched to InP. The devices have the responsivity of 0.07 A/W at 2 μm wavelength, and the device with a 10 μm diameter shows a 3 dB bandwidth of 25 GHz at −3  V bias voltage. To the best of our knowledge, this device is the fastest photodiode among all group III-V and group IV photodetectors working in the 2 μm wavelength range.

[1]  Cyril C. Renaud,et al.  Antenna Integrated THz Uni-Traveling Carrier Photodiodes , 2018, IEEE Journal of Selected Topics in Quantum Electronics.

[2]  Wei Wang,et al.  Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth. , 2017, Optics express.

[3]  David J. Thomson,et al.  High-speed detection at two micrometres with monolithic silicon photodiodes , 2015, Nature Photonics.

[4]  Design of InP-Based High-Speed Photodiode for 2- $\mu$ m Wavelength Application , 2019, IEEE Journal of Quantum Electronics.

[5]  J. Campbell,et al.  High-power, high-linearity photodiodes , 2014, 26th International Conference on Indium Phosphide and Related Materials (IPRM).

[6]  J. Wun,et al.  Ultrafast Uni-Traveling Carrier Photodiodes With GaAs0.5Sb0.5/In0.53 Ga0.47As Type-II Hybrid Absorbers for High-Power Operation at THz Frequencies , 2018, IEEE Journal of Selected Topics in Quantum Electronics.

[7]  Jian Zhao,et al.  Approaching the Non-Linear Shannon Limit , 2010, Journal of Lightwave Technology.

[8]  D. Richardson,et al.  Diode-pumped wideband thulium-doped fiber amplifiers for optical communications in the 1800 - 2050 nm window. , 2013, Optics express.

[9]  Marco N. Petrovich,et al.  100 Gbit/s WDM transmission at 2 µm: transmission studies in both low-loss hollow core photonic bandgap fiber and solid core fiber. , 2015, Optics express.

[10]  Shubhashish Datta,et al.  High-speed, large-area, p-i-n InGaAs photodiode linear array at 2-micron wavelength , 2012, Defense + Commercial Sensing.

[12]  F. H. Peters,et al.  InP-Based Active and Passive Components for Communication Systems at 2 μm , 2015, Journal of Lightwave Technology.

[13]  Hong Wang,et al.  High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate. , 2019, Optics express.

[14]  Baile Chen,et al.  InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region. , 2013, Optics letters.

[15]  Baile Chen,et al.  Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 $\mu$ m , 2011, IEEE Photonics Technology Letters.

[16]  Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes , 2012 .

[17]  Ning Li,et al.  High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode , 2004, IEEE Photonics Technology Letters.

[18]  B. Corbett,et al.  Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems , 2013 .

[19]  A. Joshi,et al.  High-Speed Low-Noise p-i-n InGaAs Photoreceiver at 2-$\mu$ m Wavelength , 2008, IEEE Photonics Technology Letters.

[20]  David J Richardson,et al.  Filling the Light Pipe , 2010, Science.

[21]  High-Speed InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells , 2018, IEEE Photonics Technology Letters.

[22]  Q. Gong,et al.  Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes. , 2018, Optics express.

[23]  P. Roberts,et al.  Ultimate low loss of hollow-core photonic crystal fibres. , 2005, Optics express.

[24]  A. Holmes,et al.  InP-Based Waveguide-Integrated Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells and 10-GHz Bandwidth at 2 $ \mathbf {\mu }$m Wavelength , 2018, Journal of Lightwave Technology.

[25]  B Corbett,et al.  Key enabling technologies for optical communications at 2000  nm. , 2018, Applied optics.

[26]  Cyril C. Renaud,et al.  Integrated Semiconductor Laser Optical Phase Lock Loops , 2018, IEEE Journal of Selected Topics in Quantum Electronics.

[27]  T. K. Woodward,et al.  Measurement of carrier escape rates, exciton saturation intensity, and saturation density in electrically biased multiple-quantum-well modulators , 1994 .

[28]  T. Ishibashi,et al.  Unitraveling-Carrier Photodiodes for Terahertz Applications , 2014, IEEE Journal of Selected Topics in Quantum Electronics.