论文信息 - POSFET Touch Sensing Devices: Bias Circuit Design Based on the ACM MOS Transistor Compact Model

POSFET Touch Sensing Devices: Bias Circuit Design Based on the ACM MOS Transistor Compact Model

In this article we present a common-drain floating gate bias circuit design for POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) touch sensing devices. A graphical-aided methodology, intended to furnish a criterion that assures the selection of the most appropriate bias resistance value, is presented

Ravinder Dahiya | Maurizio Valle | L. Barboni

[1] T. D. Binnie,et al. Low-noise charge sensitive readout for pyroelectric sensor arrays using PVDF thin film , 2000 .

[2] Carlos Galup-Montoro,et al. The Advanced Compact MOSFET (ACM) Model for Circuit Analysis and Design , 2007, 2007 IEEE Custom Integrated Circuits Conference.

[3] G. Metta,et al. Piezoelectric oxide semiconductor field effect transistor touch sensing devices , 2009 .

[4] Fernando Silveira,et al. A tool for design exploration and power optimization of CMOS RF circuits blocks , 2006, 2006 IEEE International Symposium on Circuits and Systems.

[5] Maurizio Valle,et al. Interface electronics design for POSFET devices based tactile sensing systems , 2010, 19th International Symposium in Robot and Human Interactive Communication.