Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode
暂无分享,去创建一个
Guowei Yang | Hongwu Liu | Guangtian Zou | Chunxiao Gao | Cheng-Xin Wang | Yonghao Han | G. Zou | Chengxin Wang | Guowei Yang | Hongwu Liu | Chunxiao Gao | Jifeng Luo | Yonghao Han | Jifeng Luo | C. Gao
[1] D. Schroder. Semiconductor Material and Device Characterization , 1990 .
[2] R. Kalish,et al. Is sulfur a donor in diamond , 2000 .
[3] Jay M. Shah,et al. Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes , 2003 .
[4] O. Ambacher,et al. AlN/diamond heterojunction diodes , 2003 .
[5] I. Moon,et al. Adsorption of monosaccharides, disaccharides, and maltooligosaccharides on activated carbon for separation of maltopentaose , 2004 .
[6] Yoichiro Sato,et al. Homoepitaxial diamond growth with sulfur-doping by microwave plasma-assisted chemical vapor deposition , 2001 .
[7] D. Look,et al. Observation of 430 nm Electroluminescence from ZnO/GaN Heterojunction Light-Emitting Diodes , 2003 .
[8] Tomoji Kawai,et al. Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source , 2001 .
[9] T. Sekiguchi,et al. Characterization of a diamond p-n junction using electron-beam-induced current and cathodoluminescence , 2002 .
[10] Isao Sakaguchi,et al. Sulfur-doped homoepitaxial (001) diamond with n-type semiconductive properties , 2000 .
[11] H. Kawarada,et al. Cathodoluminescence of Phosphorus-Doped {111} Homoepitaxial Diamond Thin Films , 1999 .
[12] Adelmo Ortiz-Conde,et al. Procedure for determining diode parameters at very low forward voltage , 1999 .
[13] C. Sah,et al. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics , 1957, Proceedings of the IRE.
[14] D. C. Reynolds,et al. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy , 2002 .
[15] G. Zou,et al. Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film , 2003 .
[16] Hajime Haneda,et al. Sulfur: A donor dopant for n-type diamond semiconductors , 1999 .
[17] Guowei Yang,et al. High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal , 2003 .