论文信息 - Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms - 字舞流文

Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms

E. Beam | D. Jena | H. Xing | S. Rouvimov | Xiang Gao | M. Pilla | Wenshen Li | K. Nomoto | Kevin Lee | Zongyang Hu | M. Zhu | Jinqiao Xie | A. Sundar