200°C direct bonding copper interconnects : Electrical results and reliability

Copper direct bonding is one of the most promising approaches for three dimensional integrated circuits (3D IC). This process has reached a maturity already reported in publications for wafer to wafer and die to wafer stacking. Anyway, its reliability has to be demonstrated. In this paper Electromigration (EM) and Stress Induced Voiding (SIV) tests are also performed on 200°C bonded daisy chains to investigate the reliability behaviour of such structures, first electrical tests on bonded dies is also reported.

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