论文信息 - −1 V Bias 56 Gbps germanium waveguide p-i-n photodetector with silicon contacts - 字舞流文

−1 V Bias 56 Gbps germanium waveguide p-i-n photodetector with silicon contacts

We demonstrate a silicon-contact-only 56 Gbps germanium waveguide photodetector operating at -1 V. The dark current is below 4 nA and the responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm.

Peter De Heyn | Joris Van Campenhout | Peter Verheyen | Guy Lepage | Philippe Absil | Jeroen De Coster | Gunther Roelkens | Hongtao Chen

[1] N. Feng,et al. High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide , 2009 .

[2] P. Dumon,et al. Highly Uniform 25 Gb/s Si Photonics Platform for High-Density, Low-Power WDM Optical Interconnects , 2014 .

[3] D. Knoll,et al. High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode. , 2015, Optics express.

[4] M. Watts,et al. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current. , 2011, Optics express.

[5] G. Lo,et al. Germanium photodetector with 60 GHz bandwidth using inductive gain peaking. , 2013, Optics express.

[6] Ming C. Wu,et al. Germanium wrap-around photodetectors on Silicon photonics. , 2015, Optics express.

[7] P. Verheyen,et al. High-Responsivity Low-Voltage 28-Gb/s Ge p-i-n Photodetector With Silicon Contacts , 2015, Journal of Lightwave Technology.

[8] G. Lo,et al. A high-responsivity photodetector absent metal-germanium direct contact. , 2014, Optics express.

[9] M. Morse,et al. 31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate. , 2007, Optics express.

[10] P. Crozat,et al. 42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide. , 2009, Optics express.