Boron-doped diamond heater and its application to large-volume, high-pressure, and high-temperature experiments.

A temperature of 3500 degrees C was generated using a diamond resistance heater in a large-volume Kawai-type high-pressure apparatus. Re and LaCrO(3) have conventionally been used for heaters in high-pressure studies but they cannot generate temperatures higher than 2900 degrees C and make in situ x-ray observations difficult due to their high x-ray absorption. Using a boron-doped diamond heater overcomes these problems and achieves stable temperature generation for pressure over 10 GPa. The heater starting material is a cold-compressed mixture of graphite with boron used to avoid the manufacturing difficulties due to the extreme hardness of diamond. The diamond heater was synthesized in situ from the boron-graphite mixture at temperature of 1600+/-100 degrees C and pressure of 20 GPa. By using the proposed technique, we have employed the diamond heater for high-temperature generation in a large-volume high-pressure apparatus. Achievement of temperatures above 3000 degrees C allows us to measure the melting points of the important constituents in earth's mantle (MgSiO(3), SiO(2), and Al(2)O(3)) and core (Fe and Ni) at extremely high pressures.

[1]  D. Yamazaki,et al.  Growth of large (1 mm) MgSiO3 perovskite single crystals: A thermal gradient method at ultrahigh pressure , 2007 .

[2]  Y. Fei,et al.  Melting behavior of (Mg,Fe)O solid solutions at high pressure , 2007 .

[3]  A. Deneuville,et al.  Non-destructive determination of the boron concentration of heavily doped metallic diamond thin films from Raman spectroscopy , 2003 .

[4]  G. Schubert,et al.  Treatise on geophysics , 2007 .

[5]  H. Sumiya,et al.  Formation of pure polycrystalline diamond by direct conversion of graphite at high pressure and high temperature , 2004 .

[6]  J. Vandersande,et al.  High temperature electrical conductivity measurements of natural diamond and diamond films , 1991 .

[7]  H. O’Neill Mo-MoO 2 (MOM) oxygen buffer and the free energy of formation of MoO 2 , 1986 .

[8]  H. Mao,et al.  The pressure-temperature phase and transformation diagram for carbon; updated through 1994 , 1996 .

[9]  T. Yoshino,et al.  P‐V‐T relations of MgSiO3 perovskite determined by in situ X‐ray diffraction using a large‐volume high‐pressure apparatus , 2009 .

[10]  O. Weis,et al.  Boron-Doped Homoepitaxial Diamond Layers: Fabrication, Characterization, and Electronic Applications , 1996 .

[11]  B. Wood,et al.  Experimental measurements of the graphite C−O equilibrium and CO2 fugacities at high temperature and pressure , 1995 .

[12]  J. Weimer,et al.  P-type polycrystalline diamond layers by rapid thermal diffusion of boron , 2000 .

[13]  Eiji Ito,et al.  Theory and Practice – Multianvil Cells and High-Pressure Experimental Methods , 2007 .

[14]  K. Kawabe,et al.  Pressure dependence of electrical conductivity of (Mg,Fe)SiO3 ilmenite , 2007 .

[15]  R. Ditz,et al.  Systematics of transition-metal melting , 2001 .

[16]  Y. Syono,et al.  High-pressure research : application to earth and planetary sciences , 1992 .

[17]  G. Shen,et al.  Measurement of melting temperatures of some minerals under lower mantle pressures , 1995 .

[18]  J. Bourgoin,et al.  Hopping conduction in semiconducting diamond , 1978 .

[19]  H. Sumiya,et al.  Exploratory study of the new B-doped diamond heater at high pressure and temperature and its application to in situ XRD experiments on hydrous Mg-silicate melt , 2008 .

[20]  W. Goddard,et al.  Molecular dynamics modeling of stishovite , 2002 .

[21]  Y. Fei,et al.  Melting and subsolidus relations of SiO2 at 9–14 GPa , 1993 .

[22]  L. Dubrovinsky,et al.  Molecular dynamics of stishovite melting , 1995 .

[23]  T. Hino,et al.  Preparation of B4C-mixed graphite by pressureless sintering and its air oxidation behavior , 1995 .

[24]  T. R. Anthony,et al.  Thermal conductivity of diamond between 170 and 1200 K and the isotope effect , 1993 .

[25]  B. Argent,et al.  Phase diagrams and thermodynamics of the systems ZrO2-CaO and ZrO2-MgO , 1993 .

[26]  Prins Activation of boron-dopant atoms in ion-implanted diamonds. , 1988, Physical review. B, Condensed matter.

[27]  M. Esashi,et al.  Boron-doped diamond scanning probe for thermo-mechanical nanolithography , 2003 .

[28]  S. T. Lee,et al.  Characterization of heavily boron-doped diamond films , 1996 .

[29]  A. Deneuville,et al.  Activation energy in low compensated homoepitaxial boron-doped diamond films 1 Paper presented at th , 1998 .

[30]  D. Rubie,et al.  A new large-volume multianvil system , 2004 .

[31]  S. Clark,et al.  Thermal equations of state for B1 and B2 KCl , 2002 .

[32]  V. Sidorov,et al.  Superconductivity in diamond , 2004, Nature.

[33]  H. Bureau,et al.  Intelligent anvils applied to experimental investigations: state-of-the-art , 2006 .

[34]  G. Kennedy,et al.  Melting of Sodium Chloride at Pressures to 65 kbar , 1969 .