Interlayer thickness dependence of photovoltaic properties of polycrystalline p-β-FeSi2(Al)/n-Si(100) heterojunctions

Interlayer thickness dependence of photovoltaic properties of solar cells fabricated using aluminum (Al) alloyed polycrystalline p-type β-phase iron disilicide [p-β-FeSi2(Al)]/n-type Si(100) bi-layer heterojunctions are reported. p-β-FeSi2(Al) films of thickness ∼40 nm were deposited by radio frequency magnetron-sputtering on n-Si(100) substrates with varying Al interlayer thickness. Sharp film-substrate interfaces were confirmed by field emission scanning electron microscopy. The formation of polycrystalline β-phase of FeSi2 after rapid thermal annealing at ≥650 °C was confirmed by x-ray diffraction analysis. The current density-voltage (J–V) and photo response characteristics were measured at room temperature. Photovoltaic performance of the heterojunction solar cells improved significantly after the introduction of an epitaxial Al-containing p+-Si layer of thickness ∼10 nm at p-β-FeSi2(Al)/ n-Si(100) interface. An enhancement in the short-circuit current density and overall performance improvement, com...

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