Nonvolatile memory based on the extension–retraction of bent ferroelastic domain walls: A phase field simulation
暂无分享,去创建一个
[1] Yue Zhao,et al. Nonvolatile Ferroelectric‐Domain‐Wall Memory Embedded in a Complex Topological Domain Structure , 2022, Advances in Materials.
[2] Y. Hao,et al. Nonvolatile ferroelectric domain wall memory integrated on silicon , 2021, Nature Communications.
[3] Y. Mai,et al. Direct observation of nanoscale dynamics of ferroelectric degradation , 2021, Nature Communications.
[4] A. Jiang,et al. High temperature ferroelectric domain wall memory , 2021 .
[5] Bo Wang,et al. Tunable Non-Volatile Memory by Conductive Ferroelectric Domain Walls in Lithium Niobate Thin Films , 2020, Crystals.
[6] P. Gao,et al. Direct Observation of Weakened Interface Clamping Effect Enabled Ferroelastic Domain Switching , 2019, Acta Materialia.
[7] Qinghua Zhang,et al. Controllable conductive readout in self-assembled, topologically confined ferroelectric domain walls , 2018, Nature Nanotechnology.
[8] Sergei V. Kalinin,et al. Field enhancement of electronic conductance at ferroelectric domain walls , 2017, Nature Communications.
[9] Pankaj Sharma,et al. Nonvolatile ferroelectric domain wall memory , 2017, Science Advances.
[10] L. Eng,et al. Enhancing the Domain Wall Conductivity in Lithium Niobate Single Crystals. , 2017, ACS nano.
[11] Dragan Damjanovic,et al. Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects. , 2017, Nature materials.
[12] C. Jia,et al. Controlled Charging of Ferroelastic Domain Walls in Oxide Ferroelectrics. , 2017, ACS applied materials & interfaces.
[13] Sergei V. Kalinin,et al. Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films. , 2016, Nature materials.
[14] A. Tagantsev,et al. Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels. , 2015, Nano letters.
[15] A. Tagantsev,et al. Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films. , 2015, Nature nanotechnology.
[16] Asif Islam Khan,et al. Voltage-controlled ferroelastic switching in Pb(Zr0.2Ti0.8)O3 thin films. , 2015, Nano letters.
[17] A. Tagantsev,et al. Controlled stripes of ultrafine ferroelectric domains , 2014, Nature Communications.
[18] Long-Qing Chen,et al. Local 90° switching in Pb(Zr0.2Ti0.8)O3 thin film: Phase-field modeling , 2014 .
[19] P. Gao,et al. Ferroelastic domain switching dynamics under electrical and mechanical excitations , 2014, Nature Communications.
[20] A. Tagantsev,et al. Free-electron gas at charged domain walls in insulating BaTiO3 , 2013, Nature Communications.
[21] X. Zhong,et al. Effects of space charge distribution on ferroelectric hysteresis loops considering the inhomogeneous built-in electric field: A phase field simulation , 2012 .
[22] M. Fiebig,et al. Anisotropic conductance at improper ferroelectric domain walls. , 2011, Nature materials.
[23] P. Gao,et al. Revealing the role of defects in ferroelectric switching with atomic resolution. , 2011, Nature communications.
[24] Jianguo Zhu,et al. Double hysteresis loop induced by defect dipoles in ferroelectric Pb(Zr0.8Ti0.2)O3 thin films , 2011 .
[25] D. Fang,et al. Size dependent domain configuration and electric field driven evolution in ultrathin ferroelectric films: A phase field investigation , 2010 .
[26] Sergei V. Kalinin,et al. Conduction at domain walls in oxide multiferroics. , 2009, Nature Materials.
[27] Sergei V. Kalinin,et al. Effect of ferroelastic twin walls on local polarization switching: Phase-field modeling , 2008 .
[28] Long-Qing Chen,et al. Phase-field method of phase transitions/domain structures in ferroelectric thin films: A review , 2008 .
[29] Long He,et al. Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories. , 2018, Nature materials.