A complete large and small signal charge model for an M.O.S. transistor

A complete large and small-signal, quasi-static, charge model for the MOS enhancement transistor is developed. An approximate method based upon a perturbation technique is used to solve for the large-signal, quasi-static, stored carrier charge associated with each individual terminal of the transistor. A comparison is made between the measured inter-electrode capacitances and the values predicted by the model to test the model.

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