T-CNTFET with Gate-Drain Overlap and Two Different Gate Metals: A Novel Structure with Increased Saturation Current

[1]  Ali A. Orouji,et al.  Novel attributes in scaling issues of carbon nanotube field-effect transistors , 2009, Microelectron. J..

[2]  S. Iijima Helical microtubules of graphitic carbon , 1991, Nature.

[3]  T. Belin,et al.  Characterization methods of carbon nanotubes : a review. , 2005 .

[4]  Hao Wang,et al.  A Novel Barrier Controlled Tunnel FET , 2014, IEEE Electron Device Letters.

[5]  A DC Thermal Model of Carbon Nanotube Field Effect Transistors for CAD Applications , 2016 .

[6]  Ali A. Orouji,et al.  Detailed simulation study of a dual material gate carbon nanotube field-effect transistor , 2009 .

[7]  Wei Wang,et al.  Numerical study on the performance metrics of lightly doped drain and source graphene nanoribbon field effect transistors with double-material-gate , 2013 .

[8]  M. J. Kumar,et al.  Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor , 2011, IEEE Transactions on Electron Devices.

[9]  Anna Gina Perri,et al.  A Comparison of CNTFET Models through the Design of a SRAM Cell , 2016 .

[10]  A. Naderi,et al.  The effects of source/drain and gate overlap on the performance of carbon nanotube field effect transistors , 2012 .

[11]  Transport study of gate and channel engineering on the surrounding-gate CNTFETs based on NEGF quantum theory , 2014 .

[12]  P. Keshavarzi,et al.  A bilayer graphene nanoribbon field-effect transistor with a dual-material gate , 2015 .

[13]  A. Shaker,et al.  Gate dielectric constant engineering for suppression of ambipolar conduction in CNTFETs , 2015 .

[14]  Marcin Sloma,et al.  Printed transparent electrodes containing carbon nanotubes for elastic circuits applications with enhanced electrical durability under severe conditions , 2011 .

[15]  J.C.S. Woo,et al.  The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor , 2008, IEEE Transactions on Electron Devices.

[16]  C. O. Chui,et al.  Gate-Induced Source Tunneling FET (GISTFET) , 2015, IEEE Transactions on Electron Devices.

[17]  A. Orouji,et al.  Quantum Simulation Study of a New Carbon Nanotube Field-Effect Transistor With Electrically Induced Source/Drain Extension , 2009, IEEE Transactions on Device and Materials Reliability.

[18]  A. Shaker,et al.  Influence of gate overlap engineering on ambipolar and high frequency characteristics of tunnel-CNTFET , 2015 .

[19]  M. Lundstrom,et al.  Computational study of carbon nanotube p-i-n tunnel FETs , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[20]  A. Naderi Theoretical analysis of a novel dual gate metal–graphene nanoribbon field effect transistor , 2015 .

[21]  P. Ajayan,et al.  A subthermionic tunnel field-effect transistor with an atomically thin channel , 2015, Nature.