Realistic Projections of Product Fmax Shift and Statistics due to HCI and NBTI

Product Fmax shift is shown to be mainly due to HCI and NBTI. This is because the likelihood of a TDDB event in the product speed path is negligible. An exponential drain current and voltage dependence of HCI and a power-law gate voltage dependence of NBTI are shown to fit the Fmax shift quite well for realistic guardbands.