A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base devices (f/sub max/ up to 70 GHz) and the low 1/f noise properties of monocrystalline emitter structures (noise figure-of-merit KB as low as 7.2/spl times/10/sup -10/ /spl mu/m/sup 2/). Statistical current gain data are used to demonstrate the manufacturability of this innovative SiGe HBT technology.

[1]  J. Babcock,et al.  Low-frequency noise in UHV/CVD Si- and SiGe-base bipolar transistors , 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.

[2]  J. Cressler,et al.  Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits , 1995 .

[3]  Eddy Simoen,et al.  Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors , 1996 .

[4]  R. Gotzfried,et al.  SiGe-technology and components for mobile communication systems , 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.

[5]  K. A. Jenkins,et al.  APCVD-grown self-aligned SiGe-base HBTs , 1993, 1993 Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[6]  J. Cressler.  SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications , 1998 .

[7]  J. Regolini,et al.  A high performance low complexity SiGe HBT for BiCMOS integration , 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).

[8]  A. Chantre,et al.  VLSI integration of SiGe epitaxial base bipolar transistors , 1998, 1998 URSI International Symposium on Signals, Systems, and Electronics. Conference Proceedings (Cat. No.98EX167).

[9]  K. Aufinger,et al.  SiGe base bipolar technology with 74 GHz f/sub max/ and 11 ps gate delay , 1995, Proceedings of International Electron Devices Meeting.

[10]  O. Rozeau,et al.  A 54 GHz f/sub max/ implanted base 0.35 /spl mu/m single-polysilicon bipolar technology , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[11]  G. Freeman,et al.  Device Reliability and Repeatability of a High Performance Si/SiGe HBT BiCMOS Technology , 1998, 28th European Solid-State Device Research Conference.

[12]  Andreas Gruhle,et al.  Low 1/f noise SiGe HBTs with application to low phase noise microwave oscillators , 1997 .

[13]  D. Celi,et al.  DIMENSION SCALING OF 1/F NOISE IN THE BASE CURRENT OF QUASISELF-ALIGNED POLYSILICON EMITTER BIPOLAR JUNCTION TRANSISTORS , 1997 .